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Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO(2)1) as well as defined urea nitrate coordination compounds of...

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Autores principales: Koslowski, Nico, Hoffmann, Rudolf C., Trouillet, Vanessa, Bruns, Michael, Foro, Sabine, Schneider, Jörg J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072413/
https://www.ncbi.nlm.nih.gov/pubmed/35527957
http://dx.doi.org/10.1039/c9ra05348d
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author Koslowski, Nico
Hoffmann, Rudolf C.
Trouillet, Vanessa
Bruns, Michael
Foro, Sabine
Schneider, Jörg J.
author_facet Koslowski, Nico
Hoffmann, Rudolf C.
Trouillet, Vanessa
Bruns, Michael
Foro, Sabine
Schneider, Jörg J.
author_sort Koslowski, Nico
collection PubMed
description Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO(2)1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1–3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm(−2), leakage current densities below 1.0 × 10(−9) A cm(−2) (at 1 MV cm(−1)) and breakdown voltages above 2 MV cm(−1). Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed Y(x)O(y) based TFT was fabricated employing the precursor Y-DEM-NO(2)1. The device exhibits decent TFT characteristics with a saturation mobility (μ(sat)) of 2.1 cm(2) V(−1) s(−1), a threshold voltage (V(th)) of 6.9 V and an on/off current ratio (I(on/off)) of 7.6 × 10(5).
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spelling pubmed-90724132022-05-06 Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route Koslowski, Nico Hoffmann, Rudolf C. Trouillet, Vanessa Bruns, Michael Foro, Sabine Schneider, Jörg J. RSC Adv Chemistry Combustion synthesis of dielectric yttrium oxide and aluminium oxide thin films is possible by introducing a molecular single-source precursor approach employing a newly designed nitro functionalized malonato complex of yttrium (Y-DEM-NO(2)1) as well as defined urea nitrate coordination compounds of yttrium (Y-UN 2) and aluminium (Al-UN 3). All new precursor compounds were extensively characterized by spectroscopic techniques (NMR/IR) as well as by single-crystal structure analysis for both urea nitrate coordination compounds. The thermal decomposition of the precursors 1–3 was studied by means of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). As a result, a controlled thermal conversion of the precursors into dielectric thin films could be achieved. These oxidic thin films integrated within capacitor devices are exhibiting excellent dielectric behaviour in the temperature range between 250 and 350 °C, with areal capacity values up to 250 nF cm(−2), leakage current densities below 1.0 × 10(−9) A cm(−2) (at 1 MV cm(−1)) and breakdown voltages above 2 MV cm(−1). Thereby the increase in performance at higher temperatures can be attributed to the gradual conversion of the intermediate hydroxy species into the respective metal oxide which is confirmed by X-ray photoelectron spectroscopy (XPS). Finally, a solution-processed Y(x)O(y) based TFT was fabricated employing the precursor Y-DEM-NO(2)1. The device exhibits decent TFT characteristics with a saturation mobility (μ(sat)) of 2.1 cm(2) V(−1) s(−1), a threshold voltage (V(th)) of 6.9 V and an on/off current ratio (I(on/off)) of 7.6 × 10(5). The Royal Society of Chemistry 2019-10-02 /pmc/articles/PMC9072413/ /pubmed/35527957 http://dx.doi.org/10.1039/c9ra05348d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Koslowski, Nico
Hoffmann, Rudolf C.
Trouillet, Vanessa
Bruns, Michael
Foro, Sabine
Schneider, Jörg J.
Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
title Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
title_full Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
title_fullStr Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
title_full_unstemmed Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
title_short Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
title_sort synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072413/
https://www.ncbi.nlm.nih.gov/pubmed/35527957
http://dx.doi.org/10.1039/c9ra05348d
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