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Induced growth of quasi-free-standing graphene on SiC substrates

Free-standing graphene grown on SiC substrates is desirable for micro- and nano-electronic device applications. In this work, an induced growth method to fabricate quasi-free-standing graphene on SiC was proposed, where graphene nucleation sites were generated on the SiC substrate and active carbon...

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Autores principales: Liu, Zhenxing, Su, Zhen, Li, Qingbo, Sun, Li, Zhang, Xue, Yang, Zhiyuan, Liu, Xizheng, Li, Yingxian, Li, Yanlu, Yu, Fapeng, Zhao, Xian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072993/
https://www.ncbi.nlm.nih.gov/pubmed/35530756
http://dx.doi.org/10.1039/c9ra05758g
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author Liu, Zhenxing
Su, Zhen
Li, Qingbo
Sun, Li
Zhang, Xue
Yang, Zhiyuan
Liu, Xizheng
Li, Yingxian
Li, Yanlu
Yu, Fapeng
Zhao, Xian
author_facet Liu, Zhenxing
Su, Zhen
Li, Qingbo
Sun, Li
Zhang, Xue
Yang, Zhiyuan
Liu, Xizheng
Li, Yingxian
Li, Yanlu
Yu, Fapeng
Zhao, Xian
author_sort Liu, Zhenxing
collection PubMed
description Free-standing graphene grown on SiC substrates is desirable for micro- and nano-electronic device applications. In this work, an induced growth method to fabricate quasi-free-standing graphene on SiC was proposed, where graphene nucleation sites were generated on the SiC substrate and active carbon sources were subsequently introduced to grow graphene centered along the established nucleation sites. The structure and morphology of the cultivated graphene were characterized by using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). Compared to the traditional epitaxial growth methods on SiC substrates, this approach shows a significant reduction of the buffer layer. This study provides an efficient method for growing quasi-free-standing graphene on SiC substrates and is believed to be able to broaden the application of graphene in electronic devices as SiC is an intrinsically outstanding wide bandgap semiconductor.
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spelling pubmed-90729932022-05-06 Induced growth of quasi-free-standing graphene on SiC substrates Liu, Zhenxing Su, Zhen Li, Qingbo Sun, Li Zhang, Xue Yang, Zhiyuan Liu, Xizheng Li, Yingxian Li, Yanlu Yu, Fapeng Zhao, Xian RSC Adv Chemistry Free-standing graphene grown on SiC substrates is desirable for micro- and nano-electronic device applications. In this work, an induced growth method to fabricate quasi-free-standing graphene on SiC was proposed, where graphene nucleation sites were generated on the SiC substrate and active carbon sources were subsequently introduced to grow graphene centered along the established nucleation sites. The structure and morphology of the cultivated graphene were characterized by using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). Compared to the traditional epitaxial growth methods on SiC substrates, this approach shows a significant reduction of the buffer layer. This study provides an efficient method for growing quasi-free-standing graphene on SiC substrates and is believed to be able to broaden the application of graphene in electronic devices as SiC is an intrinsically outstanding wide bandgap semiconductor. The Royal Society of Chemistry 2019-10-10 /pmc/articles/PMC9072993/ /pubmed/35530756 http://dx.doi.org/10.1039/c9ra05758g Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Liu, Zhenxing
Su, Zhen
Li, Qingbo
Sun, Li
Zhang, Xue
Yang, Zhiyuan
Liu, Xizheng
Li, Yingxian
Li, Yanlu
Yu, Fapeng
Zhao, Xian
Induced growth of quasi-free-standing graphene on SiC substrates
title Induced growth of quasi-free-standing graphene on SiC substrates
title_full Induced growth of quasi-free-standing graphene on SiC substrates
title_fullStr Induced growth of quasi-free-standing graphene on SiC substrates
title_full_unstemmed Induced growth of quasi-free-standing graphene on SiC substrates
title_short Induced growth of quasi-free-standing graphene on SiC substrates
title_sort induced growth of quasi-free-standing graphene on sic substrates
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072993/
https://www.ncbi.nlm.nih.gov/pubmed/35530756
http://dx.doi.org/10.1039/c9ra05758g
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