Induced growth of quasi-free-standing graphene on SiC substrates

Free-standing graphene grown on SiC substrates is desirable for micro- and nano-electronic device applications. In this work, an induced growth method to fabricate quasi-free-standing graphene on SiC was proposed, where graphene nucleation sites were generated on the SiC substrate and active carbon...

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Detalles Bibliográficos
Autores principales: Liu, Zhenxing, Su, Zhen, Li, Qingbo, Sun, Li, Zhang, Xue, Yang, Zhiyuan, Liu, Xizheng, Li, Yingxian, Li, Yanlu, Yu, Fapeng, Zhao, Xian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072993/
https://www.ncbi.nlm.nih.gov/pubmed/35530756
http://dx.doi.org/10.1039/c9ra05758g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072993/
https://www.ncbi.nlm.nih.gov/pubmed/35530756
http://dx.doi.org/10.1039/c9ra05758g

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