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Induced growth of quasi-free-standing graphene on SiC substrates
Free-standing graphene grown on SiC substrates is desirable for micro- and nano-electronic device applications. In this work, an induced growth method to fabricate quasi-free-standing graphene on SiC was proposed, where graphene nucleation sites were generated on the SiC substrate and active carbon...
Autores principales: | Liu, Zhenxing, Su, Zhen, Li, Qingbo, Sun, Li, Zhang, Xue, Yang, Zhiyuan, Liu, Xizheng, Li, Yingxian, Li, Yanlu, Yu, Fapeng, Zhao, Xian |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072993/ https://www.ncbi.nlm.nih.gov/pubmed/35530756 http://dx.doi.org/10.1039/c9ra05758g |
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