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Probing structural transformation and optical and magnetic properties in Cr doped GdMnO(3): Jahn–Teller distortion, photoluminescence and magnetic switching effect

The systematic evolution of structure, photoluminescence and different magnetic transitions in GdMnO(3) is reported after Cr doping. With increasing the Cr concentration from 10 to 40 at%, Rietveld refinement of X-ray diffraction patterns demonstrates that an O′ type orthorhombic structure transform...

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Detalles Bibliográficos
Autores principales: Tiwari, Priyanka, Kumar, Sandeep, Rath, Chandana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076280/
https://www.ncbi.nlm.nih.gov/pubmed/35541423
http://dx.doi.org/10.1039/c9ra08562a
Descripción
Sumario:The systematic evolution of structure, photoluminescence and different magnetic transitions in GdMnO(3) is reported after Cr doping. With increasing the Cr concentration from 10 to 40 at%, Rietveld refinement of X-ray diffraction patterns demonstrates that an O′ type orthorhombic structure transforms to O type, manifesting a reduction in lattice volume. The noticeable reduction in lattice volume is ascribed to the smaller size of the Cr(3+) ion compared to Mn(3+). The structural transformation is accompanied with a considerable decrease in the Jahn–Teller distortion factor evaluated from XRD, Raman and photoluminescence measurements. Magnetic studies reveal a considerable enhancement in Néel temperature (T(N)) from ∼42 K for x = 0 to 130 K for x = 0.4. Interestingly, we observe magnetization reversal (MR) with spin reorientation (TSR) for x = 0.3. The mechanism for such a magnetic behavior is discussed on the basis of competition between Mn, Cr and Gd. The incorporation of Cr not only constructively modifies the crystal structure and evokes the magnetic reversal phenomenon but also contributes towards the enhanced emission spectra. The promising structure and magnetic properties of Cr doped GdMnO(3) offer potential pathways for spintronics and magnetic switching devices.