Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)

A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-Ga(2)O(3). Cu and Ti/Au were deposited on the top and bottom surface of Ga(2)O(3) as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10(7) at ±2...

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Detalles Bibliográficos
Autores principales: Yang, Chao, Liang, Hongwei, Zhang, Zhenzhong, Xia, Xiaochuan, Tao, Pengcheng, Chen, Yuanpeng, Zhang, HeQiu, Shen, Rensheng, Luo, Yingmin, Du, Guotong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078229/
https://www.ncbi.nlm.nih.gov/pubmed/35540382
http://dx.doi.org/10.1039/c8ra00523k
Descripción
Sumario:A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-Ga(2)O(3). Cu and Ti/Au were deposited on the top and bottom surface of Ga(2)O(3) as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10(7) at ±2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.

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