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Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)

A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-Ga(2)O(3). Cu and Ti/Au were deposited on the top and bottom surface of Ga(2)O(3) as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10(7) at ±2...

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Autores principales: Yang, Chao, Liang, Hongwei, Zhang, Zhenzhong, Xia, Xiaochuan, Tao, Pengcheng, Chen, Yuanpeng, Zhang, HeQiu, Shen, Rensheng, Luo, Yingmin, Du, Guotong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078229/
https://www.ncbi.nlm.nih.gov/pubmed/35540382
http://dx.doi.org/10.1039/c8ra00523k
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author Yang, Chao
Liang, Hongwei
Zhang, Zhenzhong
Xia, Xiaochuan
Tao, Pengcheng
Chen, Yuanpeng
Zhang, HeQiu
Shen, Rensheng
Luo, Yingmin
Du, Guotong
author_facet Yang, Chao
Liang, Hongwei
Zhang, Zhenzhong
Xia, Xiaochuan
Tao, Pengcheng
Chen, Yuanpeng
Zhang, HeQiu
Shen, Rensheng
Luo, Yingmin
Du, Guotong
author_sort Yang, Chao
collection PubMed
description A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-Ga(2)O(3). Cu and Ti/Au were deposited on the top and bottom surface of Ga(2)O(3) as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10(7) at ±2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.
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spelling pubmed-90782292022-05-09 Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3) Yang, Chao Liang, Hongwei Zhang, Zhenzhong Xia, Xiaochuan Tao, Pengcheng Chen, Yuanpeng Zhang, HeQiu Shen, Rensheng Luo, Yingmin Du, Guotong RSC Adv Chemistry A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-Ga(2)O(3). Cu and Ti/Au were deposited on the top and bottom surface of Ga(2)O(3) as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10(7) at ±2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector. The Royal Society of Chemistry 2018-02-08 /pmc/articles/PMC9078229/ /pubmed/35540382 http://dx.doi.org/10.1039/c8ra00523k Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Yang, Chao
Liang, Hongwei
Zhang, Zhenzhong
Xia, Xiaochuan
Tao, Pengcheng
Chen, Yuanpeng
Zhang, HeQiu
Shen, Rensheng
Luo, Yingmin
Du, Guotong
Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)
title Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)
title_full Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)
title_fullStr Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)
title_full_unstemmed Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)
title_short Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga(2)O(3)
title_sort self-powered sbd solar-blind photodetector fabricated on the single crystal of β-ga(2)o(3)
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078229/
https://www.ncbi.nlm.nih.gov/pubmed/35540382
http://dx.doi.org/10.1039/c8ra00523k
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