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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was obser...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078322/ https://www.ncbi.nlm.nih.gov/pubmed/35540334 http://dx.doi.org/10.1039/c7ra13193c |
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author | Ruan, Dun-Bao Liu, Po-Tsun Chiu, Yu-Chuan Kuo, Po-Yi Yu, Min-Chin Gan, Kai-jhih Chien, Ta-Chun Sze, Simon M. |
author_facet | Ruan, Dun-Bao Liu, Po-Tsun Chiu, Yu-Chuan Kuo, Po-Yi Yu, Min-Chin Gan, Kai-jhih Chien, Ta-Chun Sze, Simon M. |
author_sort | Ruan, Dun-Bao |
collection | PubMed |
description | This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO(2) gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO(2) gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air. |
format | Online Article Text |
id | pubmed-9078322 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90783222022-05-09 Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer Ruan, Dun-Bao Liu, Po-Tsun Chiu, Yu-Chuan Kuo, Po-Yi Yu, Min-Chin Gan, Kai-jhih Chien, Ta-Chun Sze, Simon M. RSC Adv Chemistry This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis. On the other hand, a HfO(2) gate insulator was applied for the InWZnO TFT device to control the extremely conductive channel and adjust the negative threshold voltage. With both a HfO(2) gate insulator and a suitable BPL, the InWZnO TFT device exhibits good electrical characteristics and a remarkable lifetime when exposed to the ambient air. The Royal Society of Chemistry 2018-02-12 /pmc/articles/PMC9078322/ /pubmed/35540334 http://dx.doi.org/10.1039/c7ra13193c Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/ |
spellingShingle | Chemistry Ruan, Dun-Bao Liu, Po-Tsun Chiu, Yu-Chuan Kuo, Po-Yi Yu, Min-Chin Gan, Kai-jhih Chien, Ta-Chun Sze, Simon M. Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer |
title | Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer |
title_full | Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer |
title_fullStr | Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer |
title_full_unstemmed | Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer |
title_short | Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer |
title_sort | mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078322/ https://www.ncbi.nlm.nih.gov/pubmed/35540334 http://dx.doi.org/10.1039/c7ra13193c |
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