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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was obser...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078322/ https://www.ncbi.nlm.nih.gov/pubmed/35540334 http://dx.doi.org/10.1039/c7ra13193c |