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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was obser...

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Detalles Bibliográficos
Autores principales:	Ruan, Dun-Bao, Liu, Po-Tsun, Chiu, Yu-Chuan, Kuo, Po-Yi, Yu, Min-Chin, Gan, Kai-jhih, Chien, Ta-Chun, Sze, Simon M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078322/ https://www.ncbi.nlm.nih.gov/pubmed/35540334 http://dx.doi.org/10.1039/c7ra13193c

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