High-detectivity perovskite-based photodetector using a Zr-doped TiO(x) cathode interlayer

We investigated the incorporation of Zr into TiO(x) cathode interlayers used as hole-blocking layers in an organometallic halide perovskite-based photodetector. The device configuration is ITO/PEDOT:PSS/CH(3)NH(3)PbI(x)Cl(3−x)/PC(60)BM/Zr–TiO(x)/Al. The use of Zr–TiO(x) in the perovskite photodetector reduces the leakage current and improves carrier extraction. The performance of the perovskite photodetector was confirmed by analyzing the current–voltage characteristics, impedance behaviors, and dynamic characteristics. The device with a Zr–TiO(x) layer has a high specific detectivity of 1.37 × 10(13) Jones and a bandwidth of 2.1 MHz at a relatively low reverse bias and light intensity. Therefore, it can be effectively applied to devices such as image and optical sensors.