Homogeneity and tolerance to heat of monolayer MoS(2) on SiO(2) and h-BN

We investigated the homogeneity and tolerance to heat of monolayer MoS(2) using photoluminescence (PL) spectroscopy. For MoS(2) on SiO(2), the PL spectra of the basal plane differ from those of the edge, but MoS(2) on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS(2) on SiO(2) homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS(2) monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS(2) on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS(2) on SiO(2). We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS(2) to heat on the basis of interlayer/interfacial binding energy.