Single-crystalline perovskite wafers with a Cr blocking layer for broad and stable light detection in a harsh environment

Herein, ultrathin (∼35 μm) CH(3)NH(3)PbI(3) (MAPbI(3)) single-crystalline wafers have been successfully prepared by using an appropriate geometry-regulated dynamic-flow reaction system. The measurement results proved that the obtained wafers have high crystallinity, and showed broad light absorption from ultraviolet to near infrared (850 nm) which can be attributed to the indirect bandgap. Straight after, such an MAPbI(3) wafer was used to fabricate high-quality photodetectors (PDs). On account of its faster carrier transport and significantly reduced defect density, the device exhibits a high photoresponse (R) of 5 A/W and short on/off response (0.039 s/0.017 s). Interestingly, by introducing a Cr interlayer between the MAPbI(3) wafer and the Au electrode to avoid the migration of Au, the PD shows nearly no degradation when it works at 200 °C. Furthermore, the device performance shows very little degradation over the course of 60 days of storage under ambient conditions owing to its lack of grain boundaries. We believe the strategy reported here is very promising for achieving broad photodetection in a harsh environment.