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Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells

We propose a tunnel-injection structure, in which WS(2) quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simult...

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Detalles Bibliográficos
Autores principales:	Santiago, Svette Reina Merden, Caigas, Septem P., Lin, Tzu-Neng, Yuan, Chi-Tsu, Shen, Ji-Lin, Chiu, Ching-Hsueh, Kuo, Hao-Chung
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079990/ https://www.ncbi.nlm.nih.gov/pubmed/35539464 http://dx.doi.org/10.1039/c7ra13108a

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