Investigation into Co and Ga(2)O(3) co-doped ZnSe chalcogenide composite semiconductor thin films fabricated using PLD

(Ga(2)O(3))(0.1)(Co)(0.5)(ZnSe)(0.4) thin films were fabricated via PLD at different pressures and substrate temperatures. The influence of different preparation conditions on the thin films was deeply explored through investigating the structural, optical and electromagnetic properties, and surface...

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Detalles Bibliográficos
Autores principales: Pan, Yong, Wang, Li, Su, XuQiong, Li, ShuFeng, Gao, DongWen, Han, XiaoWei, Yan, HuanHuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080033/
https://www.ncbi.nlm.nih.gov/pubmed/35541336
http://dx.doi.org/10.1039/c8ra02466a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080033/
https://www.ncbi.nlm.nih.gov/pubmed/35541336
http://dx.doi.org/10.1039/c8ra02466a

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