High performance planar p-i-n perovskite solar cells based on a thin Alq(3) cathode buffer layer

As a thin cathode buffer layer (CBL) tris-(8-hydroxyquinoline), aluminum (Alq(3)) is successfully introduced into the planar p-i-n perovskite solar cells (PSC) between the PCBM layer and cathode with a device structure of ITO/PEDOT:PSS/CH(3)NH(3)PbI(3)(Cl)/PCBM/Alq(3)/Ag. Due to the as-introduced th...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Lijia, Wang, Gang, Niu, Lianbin, Yao, Yanqing, Guan, Yunxia, Cui, Yuting, Song, Qunliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080180/
https://www.ncbi.nlm.nih.gov/pubmed/35542214
http://dx.doi.org/10.1039/c8ra01633j
Descripción
Sumario:As a thin cathode buffer layer (CBL) tris-(8-hydroxyquinoline), aluminum (Alq(3)) is successfully introduced into the planar p-i-n perovskite solar cells (PSC) between the PCBM layer and cathode with a device structure of ITO/PEDOT:PSS/CH(3)NH(3)PbI(3)(Cl)/PCBM/Alq(3)/Ag. Due to the as-introduced thin Alq(3) CBL, a high performance planar PSC has been achieved with a fill factor (FF) of 72% and maximum power conversion efficiency (PCE) of 14.22%. The PCE value is approximately 29% higher than that of the reference device without Alq(3) CBL. Concerning the results of AC impedance spectra and transient photocurrent measurements, such a remarkable improvement of PCE is mainly attributed to the Alq(3)-caused better charge-extraction at the cathode, which is induced by reducing charge accumulation between PCBM and Ag.

Ejemplares similares