Cargando…

Correction: Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells

Correction for ‘Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells’ by Svette Reina Merden Santiago et al., RSC Adv., 2018, 8, 15399–15404.

Detalles Bibliográficos
Autores principales:	Merden Santiago, Svette Reina, Caigas, Septem P., Lin, Tzu-Neng, Yuan, Chi-Tsu, Shen, Ji-Lin, Chiu, Ching-Hsueh, Kuo, Hao-Chung
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080301/ https://www.ncbi.nlm.nih.gov/pubmed/35543883 http://dx.doi.org/10.1039/c8ra90034e

Ejemplares similares

Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Santiago, Svette Reina Merden, et al.
Publicado: (2018)

Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
por: Lin, Tzu-Neng, et al.
Publicado: (2017)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Intersubband Transition in GaN/InGaN Multiple Quantum Wells
por: Chen, G., et al.
Publicado: (2015)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
por: Yu, Jiadong, et al.
Publicado: (2016)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures
por: Um, Dae-Young, et al.
Publicado: (2021)

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
por: Zhu, Yadan, et al.
Publicado: (2017)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
por: Vasileiadis, I. G., et al.
Publicado: (2021)

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
por: Lottigier, Pierre, et al.
Publicado: (2023)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires
por: Park, Ji-Hyeon, et al.
Publicado: (2016)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells
por: Liu, Wei, et al.
Publicado: (2023)

Formation of quantum dots in GaN/AlGaN FETs
por: Otsuka, Tomohiro, et al.
Publicado: (2020)

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
por: Kundys, Dmytro, et al.
Publicado: (2016)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement
por: Fadil, Ahmed, et al.
Publicado: (2014)

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
por: Duque, Carlos M, et al.
Publicado: (2012)

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
por: Zhao, Wan-Ru, et al.
Publicado: (2015)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
por: Yang, Haojun, et al.
Publicado: (2017)

Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
por: Mohamed, Ahmed, et al.
Publicado: (2019)

Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires
por: Yeo, Hwan-Seop, et al.
Publicado: (2020)

Effects of Surface Plasmon Coupling on the Color Conversion of an InGaN/GaN Quantum-Well Structure into Colloidal Quantum Dots Inserted into a Nearby Porous Structure
por: Yang, Shaobo, et al.
Publicado: (2023)

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate
por: Johar, Muhammad Ali, et al.
Publicado: (2020)

Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
por: Sadeghi, Ebrahim, et al.
Publicado: (2014)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
por: Xing, Yao, et al.
Publicado: (2019)

Correction: Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
Publicado: (2019)

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature
por: Liu, Xingchen, et al.
Publicado: (2020)

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells
por: Sun, Haoran, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_nvhrb9tjd902res3b8t30n6if3