Effects of H(2) and N(2) treatment for B(2)H(6) dosing process on TiN surfaces during atomic layer deposition: an ab initio study

For the development of the future ultrahigh-scale integrated memory devices, a uniform tungsten (W) gate deposition process with good conformal film is essential for improving the conductivity of the W gate, resulting in the enhancement of device performance. As the memory devices are further scaled...

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Detalles Bibliográficos
Autores principales: Park, Hwanyeol, Lee, Sungwoo, Kim, Ho Jun, Woo, Daekwang, Park, Se Jun, Kim, Kangsoo, Yoon, Euijoon, Lee, Gun-Do
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080878/
https://www.ncbi.nlm.nih.gov/pubmed/35539938
http://dx.doi.org/10.1039/c8ra02622j

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