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Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method
In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique. The impact of W doping on the film structure, surface morphology, optical properties and chemical compositions of ZTO thin films is analyzed by atomic force microscopy, X-ray diffr...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080880/ https://www.ncbi.nlm.nih.gov/pubmed/35542333 http://dx.doi.org/10.1039/c8ra02925c |