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Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique. The impact of W doping on the film structure, surface morphology, optical properties and chemical compositions of ZTO thin films is analyzed by atomic force microscopy, X-ray diffr...

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Detalles Bibliográficos
Autores principales:	Yang, Xiang, Jiang, Shu, Li, Jun, Zhang, Jian-Hua, Li, Xi-Feng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080880/ https://www.ncbi.nlm.nih.gov/pubmed/35542333 http://dx.doi.org/10.1039/c8ra02925c

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