Cargando…
Optical constants acquisition and phase change properties of Ge(2)Sb(2)Te(5) thin films based on spectroscopy
In this work, phase change chalcogenide Ge(2)Sb(2)Te(5) (GST) thin films were fabricated by magnetron sputtering. The optical properties, especially the optical constants (refractive index and extinction coefficient), of such alloys were systematically studied by investigating their thermally and ph...
Autores principales: | Xu, Zemin, Chen, Chaonan, Wang, Zhewei, Wu, Ke, Chong, Haining, Ye, Hui |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080897/ https://www.ncbi.nlm.nih.gov/pubmed/35542376 http://dx.doi.org/10.1039/c8ra01382a |
Ejemplares similares
-
Pulsed laser deposited GeTe-rich GeTe-Sb(2)Te(3) thin films
por: Bouška, M., et al.
Publicado: (2016) -
Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
por: Huang, Ruomeng, et al.
Publicado: (2015) -
Ge(2)Sb(2)Te(5) p-Type Thin-Film Transistors on Flexible Plastic Foil
por: Daus, Alwin, et al.
Publicado: (2018) -
Artificial Anisotropy in Ge(2)Sb(2)Te(5) Thin Films after Femtosecond Laser Irradiation
por: Kolchin, Aleksandr, et al.
Publicado: (2022) -
Multi-level coding-recoding by ultrafast phase transition on Ge(2)Sb(2)Te(5) thin films
por: Wen, Shuai, et al.
Publicado: (2018)