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AFM-thermoreflectance for simultaneous measurements of the topography and temperature
To understand the thermal failure mechanisms of electronic devices, it is essential to measure the temperature and characterize the thermal properties of individual nanometer-scale transistors in electronic devices. Previously, scanning thermal microscopy (SThM) has been used to measure the local te...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9083913/ https://www.ncbi.nlm.nih.gov/pubmed/35542752 http://dx.doi.org/10.1039/c8ra05937c |