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Grafted iron(iii) ions significantly enhance NO(2) oxidation rate and selectivity of TiO(2) for photocatalytic NO(x) abatement

Semiconductor photocatalysis could be an effective means to combat nitrogen oxides (NO(x)) based air pollution through mineralisation of NO(x) to nitrate. However, most of the typically TiO(2)-based catalysts employed show a much higher reactivity towards NO than NO(2), leading to an accumulation of...

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Detalles Bibliográficos
Autores principales: Patzsch, Julia, Spencer, Jacob N., Folli, Andrea, Bloh, Jonathan Z.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9084282/
https://www.ncbi.nlm.nih.gov/pubmed/35542738
http://dx.doi.org/10.1039/c8ra05017a
Descripción
Sumario:Semiconductor photocatalysis could be an effective means to combat nitrogen oxides (NO(x)) based air pollution through mineralisation of NO(x) to nitrate. However, most of the typically TiO(2)-based catalysts employed show a much higher reactivity towards NO than NO(2), leading to an accumulation of this unwanted and toxic intermediate. By grafting the photocatalyst with small amounts (≤0.1 at%) of isolated iron(iii) ions, the reactivity towards NO(2) is increased by the factor of 9, bringing it up to par with the NO-reactivity and alleviating the problem with intermediate accumulation. Consequently, the observed selectivity of the reaction is dramatically increased from less than 40% to more than 90%. The paper also discusses possible mechanisms for this very beneficial behavior.