Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cryogenic conditions. Nanothin 3C-SiC films with a carrier concentration of 2 × 10(19) cm(−3) were epitaxially grown on a Si substrate using the LPCVD process, followed by photolithography and UV laser e...

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Detalles Bibliográficos
Autores principales: Phan, Hoang-Phuong, Dowling, Karen M., Nguyen, Tuan-Khoa, Chapin, Caitlin A., Dinh, Toan, Miller, Ruth A., Han, Jisheng, Iacopi, Alan, Senesky, Debbie G., Dao, Dzung Viet, Nguyen, Nam-Trung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085268/
https://www.ncbi.nlm.nih.gov/pubmed/35547286
http://dx.doi.org/10.1039/c8ra05797d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085268/
https://www.ncbi.nlm.nih.gov/pubmed/35547286
http://dx.doi.org/10.1039/c8ra05797d

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