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Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

We investigated the bipolar resistive switching (BRS) properties of Mn-doped NiO thin films by sol–gel spin-coating. As the Mn doping concentration increased, lattice constant, grain size and band gap were found to decrease simultaneously. Moreover, the electroforming voltages and threshold voltages...

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Detalles Bibliográficos
Autores principales:	Ge, Ni-Na, Gong, Chuan-Hui, Yuan, Xin-Cai, Zeng, Hui-Zhong, Wei, Xian-Hua
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085278/ https://www.ncbi.nlm.nih.gov/pubmed/35547288 http://dx.doi.org/10.1039/c8ra04784g

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