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Transport Characteristics of Interfacial Charge in SiC Semiconductor–Epoxy Resin Packaging Materials
The silicon carbide (SiC) wide bandgap (WBG) semiconductor power device has been widely applied for its excellent properties. However, the charge accumulated in the interface of SiC semiconductor-related insulation packaging may lead to serious material performance degradation and failure, threateni...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Frontiers Media S.A.
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086185/ https://www.ncbi.nlm.nih.gov/pubmed/35559221 http://dx.doi.org/10.3389/fchem.2022.879438 |