Enhanced dielectric properties of colossal permittivity co-doped TiO(2)/polymer composite films

Colossal permittivity (CP) materials have shown great technological potential for advanced microelectronics and high-energy-density storage applications. However, developing high performance CP materials has been met with limited success because of low breakdown electric field and large dielectric loss. Here, composite films have been developed based on surface hydroxylated ceramic fillers, (Er + Nb) co-doped TiO(2) embedded in poly(vinylidene fluoride trifluoroethylene) matrix by a simple technique. We report on simultaneously observing a large dielectric constant up to 300, exceptional low dielectric loss down to 0.04 in the low frequency range, and an acceptable breakdown electric field of 813 kV cm(−1) in the composites. Consequently, this work may pave the way for developing highly stable and superior dielectrics through a simple and scalable route to meet requirements of further miniaturization in microelectronic and energy-storage devices.