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Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers

A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed via simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a sin...

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Autores principales: So, Byeongchan, Kim, Jinwan, Kwak, Taemyung, Kim, Taeyoung, Lee, Joohyoung, Choi, Uiho, Nam, Okhyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9087817/
https://www.ncbi.nlm.nih.gov/pubmed/35547917
http://dx.doi.org/10.1039/c8ra06982d
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author So, Byeongchan
Kim, Jinwan
Kwak, Taemyung
Kim, Taeyoung
Lee, Joohyoung
Choi, Uiho
Nam, Okhyun
author_facet So, Byeongchan
Kim, Jinwan
Kwak, Taemyung
Kim, Taeyoung
Lee, Joohyoung
Choi, Uiho
Nam, Okhyun
author_sort So, Byeongchan
collection PubMed
description A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed via simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a single EBL (S-EBL), graded EBL (G-EBL), and GSL-EBL. The variation in the energy band diagram around the EBL region indicates that the introduction of GSL-EBL is very effective in enhancing carrier injection. Besides, all DUV-LEDs emitting at 280 nm are grown in the high temperature metal organic chemical deposition system. It is confirmed that the optical power of the DUV-LED with the GSL-EBL is significantly higher than that of the DUV-LED with the S-EBL and G-EBL.
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spelling pubmed-90878172022-05-10 Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers So, Byeongchan Kim, Jinwan Kwak, Taemyung Kim, Taeyoung Lee, Joohyoung Choi, Uiho Nam, Okhyun RSC Adv Chemistry A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed via simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a single EBL (S-EBL), graded EBL (G-EBL), and GSL-EBL. The variation in the energy band diagram around the EBL region indicates that the introduction of GSL-EBL is very effective in enhancing carrier injection. Besides, all DUV-LEDs emitting at 280 nm are grown in the high temperature metal organic chemical deposition system. It is confirmed that the optical power of the DUV-LED with the GSL-EBL is significantly higher than that of the DUV-LED with the S-EBL and G-EBL. The Royal Society of Chemistry 2018-10-16 /pmc/articles/PMC9087817/ /pubmed/35547917 http://dx.doi.org/10.1039/c8ra06982d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
So, Byeongchan
Kim, Jinwan
Kwak, Taemyung
Kim, Taeyoung
Lee, Joohyoung
Choi, Uiho
Nam, Okhyun
Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
title Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
title_full Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
title_fullStr Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
title_full_unstemmed Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
title_short Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
title_sort improved carrier injection of algan-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9087817/
https://www.ncbi.nlm.nih.gov/pubmed/35547917
http://dx.doi.org/10.1039/c8ra06982d
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