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Mechanical exfoliation and electrical characterization of a one-dimensional Nb(2)Se(9) atomic crystal

A novel semiconductor 1D nanomaterial, Nb(2)Se(9), was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb(2)Se(9) contains numerous single Nb(2)Se(9) chains linked by van der Waals interactions, and we confirmed that a bundle o...

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Detalles Bibliográficos
Autores principales: Kim, Bum Jun, Jeong, Byung Joo, Oh, Seungbae, Chae, Sudong, Choi, Kyung Hwan, Nasir, Tuqeer, Lee, Sang Hoon, Kim, Kwan-Woo, Lim, Hyung Kyu, Choi, Ik Jun, Chi, Linlin, Hyun, Sang-Hwa, Yu, Hak Ki, Lee, Jae-Hyun, Choi, Jae-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9089434/
https://www.ncbi.nlm.nih.gov/pubmed/35558614
http://dx.doi.org/10.1039/c8ra07437b
Descripción
Sumario:A novel semiconductor 1D nanomaterial, Nb(2)Se(9), was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb(2)Se(9) contains numerous single Nb(2)Se(9) chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb(2)Se(9) flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb(2)Se(9) flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb(2)Se(9) flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.