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Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
In this work, HfO(x)/HfO(2) homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated. The samples with an Ar/O(2) ratio of 12 : 2 exhibited improved switching performance including better uniform...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092025/ https://www.ncbi.nlm.nih.gov/pubmed/35558778 http://dx.doi.org/10.1039/c8ra06230g |
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author | Tan, Tingting Du, Yihang Cao, Ai Sun, Yaling Zhang, Hua Zha, Gangqiang |
author_facet | Tan, Tingting Du, Yihang Cao, Ai Sun, Yaling Zhang, Hua Zha, Gangqiang |
author_sort | Tan, Tingting |
collection | PubMed |
description | In this work, HfO(x)/HfO(2) homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated. The samples with an Ar/O(2) ratio of 12 : 2 exhibited improved switching performance including better uniformity, endurance and retention, which was selected to imitate the “learning” and “forgetting” function of biological synapses. The multilevel conductance of the HfO(x)/HfO(2) homo-bilayer structure under the model of pulse voltage suggests its potential to emulate the nonlinear transmission characteristics of the synapse, and a model of multilevel conductance of the HfO(x)/HfO(2) homo-bilayer structure was proposed. The device conductance continuously increases (decreases) in accordance with the number of positive (negative) voltage pulses during the potentiation (depression) process, which can emulate the change of synaptic weight in a biological synapse. |
format | Online Article Text |
id | pubmed-9092025 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90920252022-05-11 Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse Tan, Tingting Du, Yihang Cao, Ai Sun, Yaling Zhang, Hua Zha, Gangqiang RSC Adv Chemistry In this work, HfO(x)/HfO(2) homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated. The samples with an Ar/O(2) ratio of 12 : 2 exhibited improved switching performance including better uniformity, endurance and retention, which was selected to imitate the “learning” and “forgetting” function of biological synapses. The multilevel conductance of the HfO(x)/HfO(2) homo-bilayer structure under the model of pulse voltage suggests its potential to emulate the nonlinear transmission characteristics of the synapse, and a model of multilevel conductance of the HfO(x)/HfO(2) homo-bilayer structure was proposed. The device conductance continuously increases (decreases) in accordance with the number of positive (negative) voltage pulses during the potentiation (depression) process, which can emulate the change of synaptic weight in a biological synapse. The Royal Society of Chemistry 2018-12-14 /pmc/articles/PMC9092025/ /pubmed/35558778 http://dx.doi.org/10.1039/c8ra06230g Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Tan, Tingting Du, Yihang Cao, Ai Sun, Yaling Zhang, Hua Zha, Gangqiang Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse |
title | Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse |
title_full | Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse |
title_fullStr | Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse |
title_full_unstemmed | Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse |
title_short | Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse |
title_sort | resistive switching of the hfo(x)/hfo(2) bilayer heterostructure and its transmission characteristics as a synapse |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092025/ https://www.ncbi.nlm.nih.gov/pubmed/35558778 http://dx.doi.org/10.1039/c8ra06230g |
work_keys_str_mv | AT tantingting resistiveswitchingofthehfoxhfo2bilayerheterostructureanditstransmissioncharacteristicsasasynapse AT duyihang resistiveswitchingofthehfoxhfo2bilayerheterostructureanditstransmissioncharacteristicsasasynapse AT caoai resistiveswitchingofthehfoxhfo2bilayerheterostructureanditstransmissioncharacteristicsasasynapse AT sunyaling resistiveswitchingofthehfoxhfo2bilayerheterostructureanditstransmissioncharacteristicsasasynapse AT zhanghua resistiveswitchingofthehfoxhfo2bilayerheterostructureanditstransmissioncharacteristicsasasynapse AT zhagangqiang resistiveswitchingofthehfoxhfo2bilayerheterostructureanditstransmissioncharacteristicsasasynapse |