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Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
In this work, HfO(x)/HfO(2) homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated. The samples with an Ar/O(2) ratio of 12 : 2 exhibited improved switching performance including better uniform...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092025/ https://www.ncbi.nlm.nih.gov/pubmed/35558778 http://dx.doi.org/10.1039/c8ra06230g |