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Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse

In this work, HfO(x)/HfO(2) homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated. The samples with an Ar/O(2) ratio of 12 : 2 exhibited improved switching performance including better uniform...

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Detalles Bibliográficos
Autores principales:	Tan, Tingting, Du, Yihang, Cao, Ai, Sun, Yaling, Zhang, Hua, Zha, Gangqiang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092025/ https://www.ncbi.nlm.nih.gov/pubmed/35558778 http://dx.doi.org/10.1039/c8ra06230g

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