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Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS(2)/Metal Schottky Barriers
[Image: see text] Weaker Fermi level pinning (FLP) at the Schottky barriers of 2D semiconductors is electrically desirable as this would allow a minimizing of contact resistances, which presently limit device performances. Existing contacts on MoS(2) have a strong FLP with a small pinning factor of...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9098114/ https://www.ncbi.nlm.nih.gov/pubmed/35220717 http://dx.doi.org/10.1021/acsami.1c23918 |