Design of GAA Nanosheet Ferroelectric Area Tunneling FET and Its Significance with DC/RF Characteristics Including Linearity Analyses

This work reports an emerging structure of gate-all-around ferroelectric area tunneling field-effect transistor (FATFET) by considering ferroelectric and a n-epitaxial layer enveloped around the overlapped region of the source and channel to succeed with complete area of tunneling probability. To ac...

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Detalles Bibliográficos
Autores principales: Thoti, Narasimhulu, Li, Yiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9098758/
https://www.ncbi.nlm.nih.gov/pubmed/35552896
http://dx.doi.org/10.1186/s11671-022-03690-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9098758/
https://www.ncbi.nlm.nih.gov/pubmed/35552896
http://dx.doi.org/10.1186/s11671-022-03690-8

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