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Marked Efficiency Improvement of FAPb(0.7)Sn(0.3)Br(3) Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer
Highly luminescent FAPb(0.7)Sn(0.3)Br(3) nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent laye...
Autores principales: | Hu, Lufeng, Ye, Zhixiang, Wu, Dan, Wang, Zhaojin, Wang, Weigao, Wang, Kai, Cui, Xiangqian, Wang, Ning, An, Hongyu, Li, Bobo, Xiang, Bingxi, Qiu, Mingxia |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9102924/ https://www.ncbi.nlm.nih.gov/pubmed/35564163 http://dx.doi.org/10.3390/nano12091454 |
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