Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica

The atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaO(x), InO(x)) was deposited using sequential dosing of trimethylgallium or trimethylindium and water at 150 °C. In-situ the...

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Detalles Bibliográficos
Autores principales: Baumgarten, Robert, Ingale, Piyush, Knemeyer, Kristian, Naumann d’Alnoncourt, Raoul, Driess, Matthias, Rosowski, Frank
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9104076/
https://www.ncbi.nlm.nih.gov/pubmed/35564168
http://dx.doi.org/10.3390/nano12091458

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9104076/
https://www.ncbi.nlm.nih.gov/pubmed/35564168
http://dx.doi.org/10.3390/nano12091458

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