Fluorine-Terminated Polycrystalline Diamond Solution-Gate Field-Effect Transistor Sensor with Smaller Amount of Unexpectedly Generated Fluorocarbon Film Fabricated by Fluorine Gas Treatment

In this study, a partially fluorine-terminated solution-gate field-effect transistor sensor with a smaller amount of unexpectedly generated fluorohydrocarbon film on a polycrystalline diamond channel is described. A conventional method utilizing inductively coupled plasma with fluorocarbon gas leads...

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Detalles Bibliográficos
Autores principales: Shintani, Yukihiro, Kawarada, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9104346/
https://www.ncbi.nlm.nih.gov/pubmed/35591301
http://dx.doi.org/10.3390/ma15092966

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9104346/
https://www.ncbi.nlm.nih.gov/pubmed/35591301
http://dx.doi.org/10.3390/ma15092966

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