Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles

In this work, the electronic structure, and optical properties of As/Sb and Sb/Bi lateral heterostructures (LHS) along armchair and zigzag interfaces affected by strain were investigated by density functional theory. The LHSs presented strain-dependent band transformation characteristics and sensiti...

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Detalles Bibliográficos
Autores principales: Liu, Mengying, Li, Weijie, Cheng, Dan, Fang, Xuan, Zhao, Hongbin, Wang, Dengkui, Li, Jinhua, Zhai, Yingjiao, Fan, Jie, Wang, Haizhu, Wang, Xiaohua, Fang, Dan, Ma, Xiaohui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9106107/
https://www.ncbi.nlm.nih.gov/pubmed/35702203
http://dx.doi.org/10.1039/d2ra02108k

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