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Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3)

The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi(0.5)Sb(1.5)Te(3) is a p‐type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined whe...

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Autores principales: Bai, Feng‐Xian, Yu, Hao, Peng, Ya‐Kang, Li, Shan, Yin, Li, Huang, Ge, Chen, Liu‐Cheng, Goncharov, Alexander F., Sui, Jie‐He, Cao, Feng, Mao, Jun, Zhang, Qian, Chen, Xiao‐Jia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9108658/
https://www.ncbi.nlm.nih.gov/pubmed/35293146
http://dx.doi.org/10.1002/advs.202105709
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author Bai, Feng‐Xian
Yu, Hao
Peng, Ya‐Kang
Li, Shan
Yin, Li
Huang, Ge
Chen, Liu‐Cheng
Goncharov, Alexander F.
Sui, Jie‐He
Cao, Feng
Mao, Jun
Zhang, Qian
Chen, Xiao‐Jia
author_facet Bai, Feng‐Xian
Yu, Hao
Peng, Ya‐Kang
Li, Shan
Yin, Li
Huang, Ge
Chen, Liu‐Cheng
Goncharov, Alexander F.
Sui, Jie‐He
Cao, Feng
Mao, Jun
Zhang, Qian
Chen, Xiao‐Jia
author_sort Bai, Feng‐Xian
collection PubMed
description The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi(0.5)Sb(1.5)Te(3) is a p‐type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined whether the figure of merit of this model system can be further enhanced through some external parameter. With the application of pressure, it is surprisingly found that the power factor of this material exhibits λ behavior with a high value of 4.8 mW m(−1) K(−2) at pressure of 1.8 GPa. Such an enhancement is found to be driven by pressure‐induced electronic topological transition, which is revealed by multiple techniques. Together with a low thermal conductivity of about 0.89 W m(−1) K(−1) at the same pressure, a figure of merit of 1.6 is achieved at room temperature. The results and findings highlight the electronic topological transition as a new route for improving the thermoelectric properties.
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spelling pubmed-91086582022-05-20 Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3) Bai, Feng‐Xian Yu, Hao Peng, Ya‐Kang Li, Shan Yin, Li Huang, Ge Chen, Liu‐Cheng Goncharov, Alexander F. Sui, Jie‐He Cao, Feng Mao, Jun Zhang, Qian Chen, Xiao‐Jia Adv Sci (Weinh) Research Articles The electronic structure near the Fermi surface determines the electrical properties of the materials, which can be effectively tuned by external pressure. Bi(0.5)Sb(1.5)Te(3) is a p‐type thermoelectric material which holds the record high figure of merit at room temperature. Here it is examined whether the figure of merit of this model system can be further enhanced through some external parameter. With the application of pressure, it is surprisingly found that the power factor of this material exhibits λ behavior with a high value of 4.8 mW m(−1) K(−2) at pressure of 1.8 GPa. Such an enhancement is found to be driven by pressure‐induced electronic topological transition, which is revealed by multiple techniques. Together with a low thermal conductivity of about 0.89 W m(−1) K(−1) at the same pressure, a figure of merit of 1.6 is achieved at room temperature. The results and findings highlight the electronic topological transition as a new route for improving the thermoelectric properties. John Wiley and Sons Inc. 2022-03-15 /pmc/articles/PMC9108658/ /pubmed/35293146 http://dx.doi.org/10.1002/advs.202105709 Text en © 2022 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Bai, Feng‐Xian
Yu, Hao
Peng, Ya‐Kang
Li, Shan
Yin, Li
Huang, Ge
Chen, Liu‐Cheng
Goncharov, Alexander F.
Sui, Jie‐He
Cao, Feng
Mao, Jun
Zhang, Qian
Chen, Xiao‐Jia
Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3)
title Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3)
title_full Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3)
title_fullStr Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3)
title_full_unstemmed Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3)
title_short Electronic Topological Transition as a Route to Improve Thermoelectric Performance in Bi(0.5)Sb(1.5)Te(3)
title_sort electronic topological transition as a route to improve thermoelectric performance in bi(0.5)sb(1.5)te(3)
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9108658/
https://www.ncbi.nlm.nih.gov/pubmed/35293146
http://dx.doi.org/10.1002/advs.202105709
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