Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells

The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%(abs) of the initial conversion efficiency of 22.1% compared to 0.15%(abs) at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%(abs) compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.