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High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) bel...

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Autores principales: Guo, Zhinan, Cao, Rui, Wang, Huide, Zhang, Xi, Meng, Fanxu, Chen, Xue, Gao, Siyan, Sang, David K, Nguyen, Thi Huong, Duong, Anh Tuan, Zhao, Jinlai, Zeng, Yu-Jia, Cho, Sunglae, Zhao, Bing, Tan, Ping-Heng, Zhang, Han, Fan, Dianyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Oxford University Press 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9113105/
https://www.ncbi.nlm.nih.gov/pubmed/35591910
http://dx.doi.org/10.1093/nsr/nwab098
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author Guo, Zhinan
Cao, Rui
Wang, Huide
Zhang, Xi
Meng, Fanxu
Chen, Xue
Gao, Siyan
Sang, David K
Nguyen, Thi Huong
Duong, Anh Tuan
Zhao, Jinlai
Zeng, Yu-Jia
Cho, Sunglae
Zhao, Bing
Tan, Ping-Heng
Zhang, Han
Fan, Dianyuan
author_facet Guo, Zhinan
Cao, Rui
Wang, Huide
Zhang, Xi
Meng, Fanxu
Chen, Xue
Gao, Siyan
Sang, David K
Nguyen, Thi Huong
Duong, Anh Tuan
Zhao, Jinlai
Zeng, Yu-Jia
Cho, Sunglae
Zhao, Bing
Tan, Ping-Heng
Zhang, Han
Fan, Dianyuan
author_sort Guo, Zhinan
collection PubMed
description Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of [Formula: see text] , which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.
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spelling pubmed-91131052022-05-18 High-performance polarization-sensitive photodetectors on two-dimensional β-InSe Guo, Zhinan Cao, Rui Wang, Huide Zhang, Xi Meng, Fanxu Chen, Xue Gao, Siyan Sang, David K Nguyen, Thi Huong Duong, Anh Tuan Zhao, Jinlai Zeng, Yu-Jia Cho, Sunglae Zhao, Bing Tan, Ping-Heng Zhang, Han Fan, Dianyuan Natl Sci Rev Research Article Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of [Formula: see text] , which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors. Oxford University Press 2021-05-31 /pmc/articles/PMC9113105/ /pubmed/35591910 http://dx.doi.org/10.1093/nsr/nwab098 Text en © The Author(s) 2021. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd. https://creativecommons.org/licenses/by/4.0/This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Guo, Zhinan
Cao, Rui
Wang, Huide
Zhang, Xi
Meng, Fanxu
Chen, Xue
Gao, Siyan
Sang, David K
Nguyen, Thi Huong
Duong, Anh Tuan
Zhao, Jinlai
Zeng, Yu-Jia
Cho, Sunglae
Zhao, Bing
Tan, Ping-Heng
Zhang, Han
Fan, Dianyuan
High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
title High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
title_full High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
title_fullStr High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
title_full_unstemmed High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
title_short High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
title_sort high-performance polarization-sensitive photodetectors on two-dimensional β-inse
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9113105/
https://www.ncbi.nlm.nih.gov/pubmed/35591910
http://dx.doi.org/10.1093/nsr/nwab098
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