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High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) bel...
Autores principales: | , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Oxford University Press
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9113105/ https://www.ncbi.nlm.nih.gov/pubmed/35591910 http://dx.doi.org/10.1093/nsr/nwab098 |
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author | Guo, Zhinan Cao, Rui Wang, Huide Zhang, Xi Meng, Fanxu Chen, Xue Gao, Siyan Sang, David K Nguyen, Thi Huong Duong, Anh Tuan Zhao, Jinlai Zeng, Yu-Jia Cho, Sunglae Zhao, Bing Tan, Ping-Heng Zhang, Han Fan, Dianyuan |
author_facet | Guo, Zhinan Cao, Rui Wang, Huide Zhang, Xi Meng, Fanxu Chen, Xue Gao, Siyan Sang, David K Nguyen, Thi Huong Duong, Anh Tuan Zhao, Jinlai Zeng, Yu-Jia Cho, Sunglae Zhao, Bing Tan, Ping-Heng Zhang, Han Fan, Dianyuan |
author_sort | Guo, Zhinan |
collection | PubMed |
description | Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of [Formula: see text] , which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors. |
format | Online Article Text |
id | pubmed-9113105 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Oxford University Press |
record_format | MEDLINE/PubMed |
spelling | pubmed-91131052022-05-18 High-performance polarization-sensitive photodetectors on two-dimensional β-InSe Guo, Zhinan Cao, Rui Wang, Huide Zhang, Xi Meng, Fanxu Chen, Xue Gao, Siyan Sang, David K Nguyen, Thi Huong Duong, Anh Tuan Zhao, Jinlai Zeng, Yu-Jia Cho, Sunglae Zhao, Bing Tan, Ping-Heng Zhang, Han Fan, Dianyuan Natl Sci Rev Research Article Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of [Formula: see text] , which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors. Oxford University Press 2021-05-31 /pmc/articles/PMC9113105/ /pubmed/35591910 http://dx.doi.org/10.1093/nsr/nwab098 Text en © The Author(s) 2021. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd. https://creativecommons.org/licenses/by/4.0/This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Article Guo, Zhinan Cao, Rui Wang, Huide Zhang, Xi Meng, Fanxu Chen, Xue Gao, Siyan Sang, David K Nguyen, Thi Huong Duong, Anh Tuan Zhao, Jinlai Zeng, Yu-Jia Cho, Sunglae Zhao, Bing Tan, Ping-Heng Zhang, Han Fan, Dianyuan High-performance polarization-sensitive photodetectors on two-dimensional β-InSe |
title | High-performance polarization-sensitive photodetectors on two-dimensional β-InSe |
title_full | High-performance polarization-sensitive photodetectors on two-dimensional β-InSe |
title_fullStr | High-performance polarization-sensitive photodetectors on two-dimensional β-InSe |
title_full_unstemmed | High-performance polarization-sensitive photodetectors on two-dimensional β-InSe |
title_short | High-performance polarization-sensitive photodetectors on two-dimensional β-InSe |
title_sort | high-performance polarization-sensitive photodetectors on two-dimensional β-inse |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9113105/ https://www.ncbi.nlm.nih.gov/pubmed/35591910 http://dx.doi.org/10.1093/nsr/nwab098 |
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