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First-principles study of the surface reactions of aminosilane precursors over WO(3)(001) during atomic layer deposition of SiO(2)
Atomic layer deposition (ALD) has emerged as a critical technique to deposit highly conformal and uniform thin films for advanced semiconductor devices. The development of ALD processes relies on ALD precursor design to meet the required properties of thin films. In this study, we report the ALD mec...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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The Royal Society of Chemistry
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9122564/ https://www.ncbi.nlm.nih.gov/pubmed/35692616 http://dx.doi.org/10.1039/d0ra01635g |