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First-principles study of the surface reactions of aminosilane precursors over WO(3)(001) during atomic layer deposition of SiO(2)

Atomic layer deposition (ALD) has emerged as a critical technique to deposit highly conformal and uniform thin films for advanced semiconductor devices. The development of ALD processes relies on ALD precursor design to meet the required properties of thin films. In this study, we report the ALD mec...

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Detalles Bibliográficos
Autores principales:	Lee, Kyungtae, Shim, Youngseon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2020
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9122564/ https://www.ncbi.nlm.nih.gov/pubmed/35692616 http://dx.doi.org/10.1039/d0ra01635g

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