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Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications
The current study diligently analyzes the physical characteristics of halide perovskites AGeF(3) (A = K, Rb) under hydrostatic pressure using density functional theory. The goal of this research is to reduce the electronic band gap of AGeF(3) (A = K, Rb) under pressure in order to improve the optica...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9126918/ https://www.ncbi.nlm.nih.gov/pubmed/35606370 http://dx.doi.org/10.1038/s41598-022-12713-4 |
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author | Alam, Md. Safin Saiduzzaman, Md Biswas, Arpon Ahmed, Tanjun Sultana, Aldina Hossain, Khandaker Monower |
author_facet | Alam, Md. Safin Saiduzzaman, Md Biswas, Arpon Ahmed, Tanjun Sultana, Aldina Hossain, Khandaker Monower |
author_sort | Alam, Md. Safin |
collection | PubMed |
description | The current study diligently analyzes the physical characteristics of halide perovskites AGeF(3) (A = K, Rb) under hydrostatic pressure using density functional theory. The goal of this research is to reduce the electronic band gap of AGeF(3) (A = K, Rb) under pressure in order to improve the optical characteristics and assess the compounds’ suitability for optoelectronic applications. The structural parameters exhibit a high degree of precision, which correlates well with previously published work. In addition, the bond length and lattice parameters decrease significantly leading to a stronger interaction between atoms. The bonding between K(Rb)–F and Ge–F reveal ionic and covalent nature, respectively, and the bonds become stronger under pressure. The application of hydrostatic pressure demonstrates remarkable changes in the optical absorption and conductivity. The band gap becomes lower with the increment of pressure, resulting in better conductivity. The optical functions also predict that the studied materials might be used in a variety of optoelectronic devices operating in the visible and ultraviolet spectrum. Interestingly, the compounds become more suitable to be used in optoelectronic applications under pressure. Moreover, the external pressure has profound dominance on the mechanical behavior of the titled perovskites, which make them more ductile and anisotropic. |
format | Online Article Text |
id | pubmed-9126918 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-91269182022-05-25 Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications Alam, Md. Safin Saiduzzaman, Md Biswas, Arpon Ahmed, Tanjun Sultana, Aldina Hossain, Khandaker Monower Sci Rep Article The current study diligently analyzes the physical characteristics of halide perovskites AGeF(3) (A = K, Rb) under hydrostatic pressure using density functional theory. The goal of this research is to reduce the electronic band gap of AGeF(3) (A = K, Rb) under pressure in order to improve the optical characteristics and assess the compounds’ suitability for optoelectronic applications. The structural parameters exhibit a high degree of precision, which correlates well with previously published work. In addition, the bond length and lattice parameters decrease significantly leading to a stronger interaction between atoms. The bonding between K(Rb)–F and Ge–F reveal ionic and covalent nature, respectively, and the bonds become stronger under pressure. The application of hydrostatic pressure demonstrates remarkable changes in the optical absorption and conductivity. The band gap becomes lower with the increment of pressure, resulting in better conductivity. The optical functions also predict that the studied materials might be used in a variety of optoelectronic devices operating in the visible and ultraviolet spectrum. Interestingly, the compounds become more suitable to be used in optoelectronic applications under pressure. Moreover, the external pressure has profound dominance on the mechanical behavior of the titled perovskites, which make them more ductile and anisotropic. Nature Publishing Group UK 2022-05-23 /pmc/articles/PMC9126918/ /pubmed/35606370 http://dx.doi.org/10.1038/s41598-022-12713-4 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Alam, Md. Safin Saiduzzaman, Md Biswas, Arpon Ahmed, Tanjun Sultana, Aldina Hossain, Khandaker Monower Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications |
title | Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications |
title_full | Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications |
title_fullStr | Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications |
title_full_unstemmed | Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications |
title_short | Tuning band gap and enhancing optical functions of AGeF(3) (A = K, Rb) under pressure for improved optoelectronic applications |
title_sort | tuning band gap and enhancing optical functions of agef(3) (a = k, rb) under pressure for improved optoelectronic applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9126918/ https://www.ncbi.nlm.nih.gov/pubmed/35606370 http://dx.doi.org/10.1038/s41598-022-12713-4 |
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