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On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour

Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts,...

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Autores principales: Li, Tianming, Hantusch, Martin, Qu, Jiang, Bandari, Vineeth Kumar, Knupfer, Martin, Zhu, Feng, Schmidt, Oliver G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9130281/
https://www.ncbi.nlm.nih.gov/pubmed/35610214
http://dx.doi.org/10.1038/s41467-022-30498-y
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author Li, Tianming
Hantusch, Martin
Qu, Jiang
Bandari, Vineeth Kumar
Knupfer, Martin
Zhu, Feng
Schmidt, Oliver G.
author_facet Li, Tianming
Hantusch, Martin
Qu, Jiang
Bandari, Vineeth Kumar
Knupfer, Martin
Zhu, Feng
Schmidt, Oliver G.
author_sort Li, Tianming
collection PubMed
description Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios.
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spelling pubmed-91302812022-05-26 On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour Li, Tianming Hantusch, Martin Qu, Jiang Bandari, Vineeth Kumar Knupfer, Martin Zhu, Feng Schmidt, Oliver G. Nat Commun Article Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios. Nature Publishing Group UK 2022-05-24 /pmc/articles/PMC9130281/ /pubmed/35610214 http://dx.doi.org/10.1038/s41467-022-30498-y Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Li, Tianming
Hantusch, Martin
Qu, Jiang
Bandari, Vineeth Kumar
Knupfer, Martin
Zhu, Feng
Schmidt, Oliver G.
On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour
title On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour
title_full On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour
title_fullStr On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour
title_full_unstemmed On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour
title_short On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour
title_sort on-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9130281/
https://www.ncbi.nlm.nih.gov/pubmed/35610214
http://dx.doi.org/10.1038/s41467-022-30498-y
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