Recent Advances in Structuring and Patterning Silicon Nanowire Arrays for Engineering Light Absorption in Three Dimensions

[Image: see text] Vertically aligned silicon nanowire (VA-SiNW) arrays can significantly enhance light absorption and reduce light reflection for efficient light trapping. VA-SiNW arrays thus have the potential to improve solar cell design by providing reduced front-face reflection while allowing the fabrication of thin, flexible, and efficient silicon-based solar cells by lowering the required amount of silicon. Because their interaction with light is highly dependent on the array geometry, the ability to control the array morphology, functionality, and dimension offers many opportunities. Herein, after a short discussion about the remarkable optical properties of SiNW arrays, we report on our recent progress in using chemical and electrochemical methods to structure and pattern SiNW arrays in three dimensions, providing substrates with spatially controlled optical properties. Our approach is based on metal-assisted chemical etching (MACE) and three-dimensional electrochemical axial lithography (3DEAL), which are both affordable and large-scale wet-chemical methods that can provide a spatial resolution all the way down to the sub-5 nm range.