Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

[Image: see text] Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest...

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Detalles Bibliográficos
Autores principales: Escobar Steinvall, Simon, Stutz, Elias Z., Paul, Rajrupa, Zamani, Mahdi, Leran, Jean-Baptiste, Dimitrievska, Mirjana, Fontcuberta i Morral, Anna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9131307/
https://www.ncbi.nlm.nih.gov/pubmed/35647493
http://dx.doi.org/10.1021/acsaem.1c02484

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9131307/
https://www.ncbi.nlm.nih.gov/pubmed/35647493
http://dx.doi.org/10.1021/acsaem.1c02484

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