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Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air

Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF(6) atmosphere. Considering the effect of SF(6) gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale blac...

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Detalles Bibliográficos
Autores principales: Wen, Zhidong, Zhang, Zhe, Zhang, Kunpeng, Li, Jiafa, Shi, Haiyan, Li, Man, Hou, Yu, Xue, Mei, Zhang, Zichen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9142894/
https://www.ncbi.nlm.nih.gov/pubmed/35630993
http://dx.doi.org/10.3390/nano12101772
Descripción
Sumario:Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF(6) atmosphere. Considering the effect of SF(6) gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale black silicon. In the wavelength range of 0.3–2.5 µm, the role of air could replace SF(6) gas to texture black silicon by laser inducing with appropriate processing parameters. Then, to extend the working window of its excellent light-trapping status, laser-plasma shockwave cleaning was introduced to eliminate the deposition and improve the structures and morphology. The results revealed that the micro-nano structures became higher, denser, and more uniform with increasing cleaning times and deteriorating cleaning velocity, which compensated for the role of S atoms from the ambient SF(6). Moreover, absorptance above 85% in the wavelength range of 0.3–15 µm was realized using our method. The effect of scanning pitch between adjacent rows on large-scale black silicon was also discussed. Our method realized the ultrahigh absorptance of large-scale black silicon fabricated in air from visible to mid-infrared, which is of significance in the field of optoelectronic devices.