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Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process electrostatic discharge (ESD) protection applications is proposed. The transmission line pulse (TLP) results show that the proposed device has a low turn-on voltage of 1.77 V. Compared with conventional SCR and di...

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Detalles Bibliográficos
Autores principales:	Zhu, Xinyu, Dong, Shurong, Yu, Fangjun, Deng, Feifan, Shubhakar, Kalya, Pey, Kin Leong, Luo, Jikui
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143253/ https://www.ncbi.nlm.nih.gov/pubmed/35630965 http://dx.doi.org/10.3390/nano12101743

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