Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Due to the complexity of the 2D coupling effects in AlGaN/GaN HEMTs, the characterization of a device’s off-state performance remains the main obstacle to exploring the device’s breakdown characteristics. To predict the off-state performance of AlGaN/GaN HEMTs with efficiency and veracity, an artifi...

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Detalles Bibliográficos
Autores principales: Chen, Jing, Guo, Yufeng, Zhang, Jun, Liu, Jianhua, Yao, Qing, Yao, Jiafei, Zhang, Maolin, Li, Man
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143468/
https://www.ncbi.nlm.nih.gov/pubmed/35630204
http://dx.doi.org/10.3390/mi13050737

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143468/
https://www.ncbi.nlm.nih.gov/pubmed/35630204
http://dx.doi.org/10.3390/mi13050737

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